Embedded FRD High Voltage MOSFET with New Lateral Variable Doping Technology for Industrial Switching Power Supply

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Type N Technology MOSFET
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. Product Name High Voltage MOSFET
Leakage Low Leakage Can Reach Less Than 1 µ A Voltage Rating High Voltage/Ultra-high Voltage
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Product Description:

High Voltage MOSFET is a kind of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultra-high voltage capability and excellent performance. With its high-voltage type N product name, High Voltage MOSFET is especially designed for motor series, inverter, half bridge/full bridge circuit applications, LED driver, adaptors, industrial switching power supply, inverters, smart meter, cabinet power supply, and electrical power system. High Voltage MOSFET features a FRD HV MOSFET construction that ensures excellent thermal performance, ultra-low RDS(ON) resistance, and high-pulse current capability. It also provides excellent switching performance, low EMI, and low gate charge. With these features, High Voltage MOSFET provides superior performance in various applications. High Voltage MOSFET is a great choice for industrial applications that require high voltage, low thermal resistance, and high power capability. With its excellent performance and high voltage capability, High Voltage MOSFET is the ideal solution for motor series, inverter, half bridge/full bridge circuit applications, LED driver, adaptors, industrial switching power supply, inverters, smart meter, cabinet power supply, and electrical power system.

 

Technical Parameters:

Parameter Value
Type N
Leakage Low Leakage Can Reach Less Than 1 µ A
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Product name High Voltage MOSFET
Heat Dissipation Great Heat Dissipation
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Technology MOSFET
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/Full Bridge Circuit Applications, Etc.
Voltage Rating High Voltage/Ultra-high Voltage
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
 

Applications:

The Application of REASUNOS High Voltage MOSFET

REASUNOS' High Voltage MOSFET is a popular transistor device used for various applications. The product has a brand name of REASUNOS and place of origin is Guangdong, China. The price of the product is based on the product itself. The product is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time of the product depends on the total quantity and usually takes between 2-30 days. Payment terms for the product are 100% T/T in Advance(EXW). The supply ability is 5KK/month. The product has many advantages such as new lateral variable doping technology, special power MOS structure, excellent characteristics in high-temperature, low leakage can reach less than 1 µ A, great heat dissipation, and a high voltage/ultra-high voltage rating. The applications of this product include LED driver, adaptors, industrial switching power supply, and inverters, etc.

 

Support and Services:

High Voltage MOSFET Technical Support and Service

We provide technical support and services to help you get the most out of our High Voltage MOSFET products and solutions. Our technical team consists of experts who are experienced in the design, implementation and troubleshooting of High Voltage MOSFET applications, making them the perfect resource for any technical queries you may have.

Our technical team is available to answer questions such as:

  • How to choose the correct High Voltage MOSFET for a specific application?
  • What are the parameters to consider while designing with High Voltage MOSFET?
  • How to use High Voltage MOSFET to achieve the desired results?
  • How to troubleshoot High Voltage MOSFET related problems?

We also offer design services to help you with specific application needs. Get in touch with us to get the most out of our High Voltage MOSFET products and solutions.

 

Packing and Shipping:

High Voltage MOSFET Packaging and Shipping:

High Voltage MOSFET products are securely packaged with bubble wrap and/or foam lining to ensure the products are not damaged during shipping. The packages are then placed in a sturdy cardboard box and sealed with tape for extra protection during shipment. All orders are shipped via a reputable shipping carrier with tracking number provided.

 

FAQ:

Q: What is the Brand Name of High Voltage MOSFET?
A: The Brand Name of High Voltage MOSFET is REASUNOS.
Q: Where is the Origin of High Voltage MOSFET?
A: The Origin of High Voltage MOSFET is Guangdong, China.
Q: What is the Price of High Voltage MOSFET?
A: The Price of High Voltage MOSFET is Confirm price based on product.
Q: How is the Packaging Details of High Voltage MOSFET?
A: The Packaging Details of High Voltage MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the Delivery Time of High Voltage MOSFET?
A: The Delivery Time of High Voltage MOSFET is 2-30 days (Depends on Total Quantity).