Heatproof High Voltage MOSFET Transistor Multiscene Anti Surge

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. Product Name High Voltage MOSFET
Leakage Low Leakage Can Reach Less Than 1 µ A Heat Dissipation Great Heat Dissipation
Voltage Rating High Voltage/Ultra-high Voltage Type N
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. Resistance Low On-resistance
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Heatproof High Voltage MOSFET

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High Voltage MOSFET Multiscene

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Anti Surge High Voltage Transistor

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

high Voltage MOS-Gate Transistor with Embedded FRD

 

Product Description:

High Voltage MOSFET is the Ultra-high Voltage MOS-Gate Transistor with Embedded FRD, which is type N. It is widely used in motor series, inverter, half-bridge/full bridge circuit applications and etc. It has great heat dissipation and superior characteristics in high-temperature owing to the new lateral variable doping technology and special power MOS structure. Therefore, High Voltage MOSFET is the optimal choice for high-voltage applications.

 

Technical Parameters:

Product name High Voltage MOSFET
Type N
Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters, Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Smart Meter, Cabinet Power Supply, Electrical Power System, Etc.
Leakage Low Leakage Can Reach Less Than 1 µ A
Resistance Low On-resistance
Voltage Rating High Voltage/Ultra-high Voltage
Heat Dissipation Great Heat Dissipation
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
 

Applications:

High Voltage MOSFET – REASUNOS

REASUNOS High Voltage MOSFET is the perfect solution for applications that require high voltage and low leakage. With its revolutionary lateral variable doping technology, special power MOS structure, and excellent characteristics in high-temperature, REASUNOS High Voltage MOSFET can be used in LED driver, adaptors, industrial switching power supply, inverters, smart meter, cabinet power supply, and electrical power system. It has a low leakage of less than 1µA and can be delivered in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is 2-30 days, depending on the total quantity, and the price is confirmed based on the product. REASUNOS High Voltage MOSFET has a supply ability of 5KK/month.

 

Support and Services:

High Voltage MOSFET Technical Support and Services

At XYZ, we value customer satisfaction and provide a comprehensive range of technical support and services for our High Voltage MOSFET products. Our team of experienced engineers is available to answer any questions you may have regarding product selection, design, and application. We use the latest technologies and resources to provide our customers with the best support possible.

We offer a variety of services, including:

  • Product selection assistance
  • Design support
  • Application assistance
  • Troubleshooting
  • Technical advice
  • Software and hardware updates
  • On-site support

We are dedicated to providing our customers with the highest quality technical support and services. If you have any questions or need assistance, please reach out to us!

 

Packing and Shipping:

High Voltage MOSFET products are packaged and shipped in the following way:

  • The product is placed in a cardboard box.
  • The cardboard box is placed in a corrugated box with foam cushioning material.
  • The corrugated box is securely sealed with tape.
  • The package is labeled with product information.
  • The package is shipped to the customer via a reliable courier service.
 

FAQ:

Q. What is the brand name for the High Voltage MOSFET?
A. The brand name for the High Voltage MOSFET is REASUNOS.
Q. Where is the High Voltage MOSFET manufactured?
A. The High Voltage MOSFET is manufactured in Guangdong, China.
Q. How much does the High Voltage MOSFET cost?
A. The price of the High Voltage MOSFET depends on the product.
Q. How is the High Voltage MOSFET packaged?
A. The High Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q. How long does it take to deliver the High Voltage MOSFET?
A. Delivery time for the High Voltage MOSFET is 2-30 days, depending on the total quantity.
Q. What payment terms are available for the High Voltage MOSFET?
A. Payment terms for the High Voltage MOSFET are 100% T/T in Advance (EXW).
Q. How many High Voltage MOSFETs can be supplied monthly?
A. The supply ability for the High Voltage MOSFET is 5KK/month.