600V Durable Super Junction MOSFET Multipurpose Small Internal Resistance
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xDevice Type | Power Discrete Devices | Type | N |
---|---|---|---|
Product Name | Super Junction MOSFET/SJ MOSTET | Capacitance | Ultra-low Junction Capacitance |
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities | Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Internal Resistance | Ultra Small Internal Resistance | Package | Ultra Small Package |
High Light | 600V Super Junction MOSFET,Durable Super Junction MOSFET,Multipurpose SJ MOSTET |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSE60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
2 | RSE60R190S | N | 17.6 | 600 | 165 | 190 | TO-263 | 800 | |
3 | RSE60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
4 | RSF60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
5 | RSF60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
6 | RS60R130F | N | 30 | 600 | 110 | 130 | TO-220F | 1000 | |
7 | RS60R130W | N | 30 | 600 | 110 | 130 | TO247-3 | 600 | |
8 | RSF60R099F | N | 31 | 600 | 86 | 99 | TO-220F | 1000 | |
9 | RSF60R099W | N | 31 | 600 | 86 | 99 | TO247-3 | 600 | |
10 | RSF60R070W | N | 45 | 600 | 61 | 70 | TO247-3 | 600 | |
11 | RSF60R041W | N | 70 | 600 | 35 | 41 | TO247-3 | 600 | |
12 | RSF60R070F | N | 48 | 600 | 58 | 68 | TO-220F | 1000 | |
13 | RSF60R026W | N | 100 | 600 | 20 | 26 | TO247-3 | 600 | |
14 | RSU4N65D | N | 4 | 650 | 880 | 1000 | TO-252 | 2500 | |
15 | RSU7N65D | N | 7 | 650 | 560 | 650 | TO-252 | 2500 | |
16 | RSU7N65F | N | 7 | 650 | 560 | 650 | TO-220F | 1000 | |
17 | RS65R600D | N | 7.3 | 650 | 520 | 600 | TO-252 | 2500 | |
18 | RS65R600F | N | 7.3 | 650 | 520 | 600 | TO-220F | 1000 | |
19 | RSE65R550D | N | 7.6 | 650 | 480 | 550 | TO-252 | 2500 | |
20 | RSU12N65F | N | 12 | 650 | 380 | 420 | TO-220F | 1000 | |
21 | RS65R380D | N | 11 | 650 | 340 | 380 | TO-252 | 2500 | |
22 | RS65R380F | N | 11 | 650 | 340 | 380 | TO-220F | 1000 | |
23 | RS65R280D | N | 15 | 650 | 240 | 280 | TO-252 | 2500 | |
24 | RS65R280F | N | 15 | 650 | 240 | 280 | TO-220F | 1000 | |
25 | RSE65R210F | N | 16.8 | 650 | 185 | 210 | TO-220F | 1000 | |
26 | RS65R190F | N | 20 | 650 | 160 | 190 | TO-220F | 1000 | |
27 | RS65R190S | N | 20 | 650 | 160 | 190 | TO-263 | 800 | |
28 | RS65R190T | N | 20 | 650 | 160 | 190 | TO-220 | 1000 | |
29 | RSF65R190T | N | 20 | 650 | 170 | 190 | TO-220 | 1000 | |
30 | RSE65R180F | N | 22 | 650 | 150 | 180 | TO-220F | 1000 | |
31 | RSE65R165F | N | 20.4 | 650 | 145 | 165 | TO-220F | 1000 | |
32 | RSF65R130F | N | 26 | 650 | 115 | 130 | TO-220F | 1000 | |
33 | RSE70R600F | N | 7.3 | 700 | 520 | 600 | TO-220F | 1000 | |
34 | RSE70R420F | N | 11 | 700 | 365 | 420 | TO-220F | 1000 | |
35 | RSE70R360F | N | 12 | 700 | 315 | 360 | TO-220F | 1000 | |
36 | RSE80R850D | N | 7 | 800 | 740 | 850 | TO-252 | 2500 | |
37 | RS80R500F | N | 9 | 800 | 420 | 500 | TO-220F | 1000 | |
38 | RSE80R380F | N | 13 | 800 | 330 | 380 | TO-220F | 1000 | |
39 | RSE80R250F | N | 18 | 800 | 220 | 250 | TO-220F | 1000 |
Ultra Small Package Super Junction MOSFET with Ultra-low Junction Capacitance and Ultra Small Internal Resistance
Product Description:
The Super Junction MOSFET is an advanced device type that is used in power discrete devices. It has a large EMI margin and is especially suitable for a variety of applications such as LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, new energy power equipment, etc. This Si Super Junction MOSFET is designed with an ultra-low junction capacitance, which reduces the power dissipation and enhances the efficiency of the device.
Technical Parameters:
Parameters | Description |
---|---|
Product Name | Si super junction MOSFET, superjunction power mosfet, SJ MOSFET |
Capacitance | Ultra-low Junction Capacitance |
Device Type | Power Discrete Devices |
Type | N |
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
EMI margin | Large EMI Margin |
Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Internal Resistance | Ultra Small Internal Resistance |
Package | Ultra Small Package |
Applications:
Super Junction MOSFET, also known as SJ MOSFET, is an advanced type of metal oxide semiconductor field effect transistor (MOSFET) developed by REASUNOS. It is made by a multi-layer epitaxy process, and compared with other MOSFETs made with trench process, it has excellent anti EMI and anti surge capabilities. It has an ultra-low junction capacitance and ultra small internal resistance. It is widely used in power discrete devices, such as high frequency switching power supply, motor drive, solar inverter, and power adapter.
The Super Junction MOSFETs from REASUNOS are of superior quality, with many advantages over traditional MOSFETs. It has very low on-resistance, which improves efficiency and helps to save energy. It also has low thermal resistance, allowing greater power dissipation and higher power density. It has a wide operating temperature range, making it suitable for a variety of applications. In addition, it has a high current capability, allowing it to handle high power applications.
REASUNOS Super Junction MOSFETs come with a competitive price and are available in a variety of packages. They are dustproof, waterproof, and anti-static and are placed inside cardboard boxes in cartons for shipping. Delivery time is usually 2 to 30 days, depending on the total quantity, and payment is accepted via 100% T/T in advance (EXW). The supply ability of these products is up to 5KK per month.
Support and Services:
Technical Support and Service for Super Junction MOSFET
At XYZ, we are committed to providing our customers with the best products and services available. We offer technical support for Super Junction MOSFET products, including troubleshooting and installation assistance. Our technical support team is available to answer any questions you may have regarding your purchase.
Our customer service team is also available to answer any questions or concerns you may have about your purchase, as well as providing help with any returns, exchanges, or repairs. We are committed to ensuring that your shopping experience is as smooth as possible.
If you have any questions or concerns regarding your purchase of Super Junction MOSFET products, please do not hesitate to contact us. We are here to help!
Packing and Shipping:
Super Junction MOSFET are typically packaged and shipped in an antistatic bag, bubble wrap, and a cardboard box. The box should be labeled with the device’s part number, the date of shipment, and the customer's name. If the device is being shipped to a customer overseas, the box should also be labeled with the appropriate customs paperwork.
FAQ:
- Q1: What is the brand name of the Super Junction MOSFET?
- A1: The brand name of the Super Junction MOSFET is REASUNOS.
- Q2: Where is the Super Junction MOSFET manufactured?
- A2: The Super Junction MOSFET is manufactured in Guangdong, China.
- Q3: What is the price of the Super Junction MOSFET?
- A3: The price of the Super Junction MOSFET is confirmed based on the product.
- Q4: How is the Super Junction MOSFET packaged?
- A4: The Super Junction MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
- Q5: How long does it take to deliver the Super Junction MOSFET?
- A5: It takes 2-30 days to deliver the Super Junction MOSFET, depending on the total quantity.