Heat Resistance Silicon Carbide SBD Semiconductor Stable Multi Function

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Material Silicon Carbide Heat Resistance High Temperature Resistance
Efficiency High Efficiency Product Name Silicon Carbide SBD/SiC SBD
Characteristics Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Application PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc Device Type Power Discrete Devices
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Heat Resistance Silicon Carbide SBD

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Silicon Carbide SBD Stable

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Multi Function Sic Semiconductor

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No. Part No. VF(V)Typ (TA=25℃) IF(A)TC=145℃(TA=25℃) Typ IR(µA)(TA=25℃) VR(V)(TA=25℃) Package MOQ(pcs)
1 RSS04065D 1.4 4 1 650 TO-252 2500
2 RSS04065G 1.4 4 1 650 DFN5*6 5000
3 RSS04065A 1.4 4 1 650 TO-220-2L 1000
4 RSS04065B 1.4 4 1 650 TO-220Internal insulation 1000
5 RSS06065D 1.36 6 1.2 650 TO-252 2500
6 RSS06065G 1.36 6 1.2 650 DFN5*6 5000
7 RSS06065R 1.36 6 1.2 650 DFN8*8 260
8 RSS06065S 1.36 6 1.2 650 TO-263 800
9 RSS06065A 1.36 6 1.2 650 TO-220-2L 1000
10 RSS06065B 1.36 6 1.2 650 TO-220Internal insulation 1000
11 RSS08065D 1.39 8 6 650 TO-252 2500
12 RSS08065G 1.39 8 6 650 DFN5*6 5000
13 RSS08065R 1.39 8 6 650 DFN8*8 260
14 RSS08065S 1.39 8 6 650 TO-263 800
15 RSS08065A 1.39 8 6 650 TO-220-2L 1000
16 RSS08065B 1.39 8 6 650 TO-220Internal insulation 1000
17 RSS10065D 1.37 10 5 650 TO-252 2500
18 RSS10065R 1.37 10 5 650 DFN8*8 260
19 RSS10065S 1.37 10 5 650 TO-263 800
20 RSS10065A 1.37 10 5 650 TO-220-2L 1000
21 RSS10065B 1.37 10 5 650 TO-220Internal insulation 1000
22 RSS15065A 1.4 15 2 650 TO-220-2L 1000
23 RSS20065A 1.35 20 6 650 TO-220-2L 1000
24 RSS20065W 1.45 20 5 650 TO-247-2L 600
25 RSS20065K 1.37 20 5 650 TO-247-3L 600
26 RSS30065W 1.5 30 2 650 TO-247-2L 600
27 RSS30065K 1.4 30 1 650 TO-247-3L 600
28 RSS40065K 1.35 40 6 650 TO-247-3L 600
29 RSS50065W 1.5 50 2 650 TO-247-2L 600
30 RSS60065K 1.5 60 2 650 TO-247-3L 600
31 RSS02120D 1.38 2 1 1200 TO-252 2500
32 RSS10120A 1.43 10 2 1200 TO-220-2L 1000
33 RSS10120W 1.43 10 2 1200 TO-247-2L 600
34 RSS15120W 1.55 15 5 1200 TO-247-2L 600
35 RSS20120W 1.45 20 2 1200 TO-247-2L 600
36 RSS20120K 1.45 20 2 1200 TO-247-3L 600
37 RSS30120W 1.5 30 5 1200 TO-247-2L 600
38 RSS30120K 1.55 30 5 1200 TO-247-3L 600
39 RSS40120K 1.45 40 2 1200 TO-247-3L 600
40 RSS40120W 1.45 40 2 1200 TO-247-2L 600
41 RSS50120W 1.4 50 30 1200 TO-247-2L 600
42 RSS25170W 1.55 25 5 1700 TO-247-2L 600
43 RSS10200W 1.45 10 8 2000 TO-247-2L 600
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No. Part No. VF(V)Typ (TA=25℃) IF(A)TC=145℃(TA=25℃) Typ IR(µA)(TA=25℃) VR(V)(TA=25℃) Package MOQ(pcs)
Product Description

High Temperature Resistance Silicon Carbide Schottky Diode for PFC Circuit Based on National Military Standard Production

Product Description:

Silicon Carbide SBD/SiC SBD is a kind of silicon carbide schottky rectifier diode, which is based on the national military standard production line and features extremely low reverse recovery current, strong anti surge current ability and high power. The process is stable and the quality is reliable, which makes it an ideal choice for various demanding applications.

Silicon Carbide SBD/SiC SBD has high power and can provide excellent protection against surge currents. It also offers extremely low reverse recovery current, making it an ideal choice for controlling high power applications. Furthermore, it is based on the national military standard production line, guaranteeing a stable process and reliable quality.

In conclusion, Silicon Carbide SBD/SiC SBD is a high power silicon carbide schottky rectifier diode that features extremely low reverse recovery current, strong anti surge current ability and high power. It is based on the national military standard production line, ensuring a stable process and reliable quality. Therefore, it is an ideal choice for various demanding applications.

 

Technical Parameters:

Property Value
Product name Silicon Carbide SBD/SiC SBD
Material Silicon Carbide
Device Type Power Discrete Devices
Application PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Frequency High Frequency
Efficiency High Efficiency
Power High Power
Heat Resistance High Temperature Resistance
Characteristics Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability
Keywords Silicon Carbide Schottky Rectifier Diode, Silicon Carbide Barrier Diode, Sic Schottky Barrier Diode, Sic Barrier Diode
 

Applications:

REASUNOS Silicon Carbide SBD, also known as Schottky Rectifier Diode, are widely used in PFC Circuit, DC/AC Inverter for Solar and Wind Power Generation, UPS Power Supply, Motor Driver, and other harsh environment applications. With its characteristics of Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability, High Temperature Resistance and High Power, REASUNOS Silicon Carbide SBD is the ideal choice for these applications.

REASUNOS Silicon Carbide SBD is produced in Guangdong, CN, and the price varies based on the product. The packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is 2-30 days depending on the total quantity. The payment terms are 100% T/T in Advance(EXW). The supply ability is 5KK/month.

 

Support and Services:

Silicon Carbide SBD Technical Support and Services
We offer a variety of technical support and services for Silicon Carbide SBD products. Our support team is available to answer questions, provide technical assistance, and help troubleshoot any issues you may be having with the product. Additionally, we provide a comprehensive warranty that covers any defects in materials and workmanship. We also offer repair and replacement services for any damaged or defective parts. Finally, we provide training and educational resources to help you maximize the potential of your Silicon Carbide SBD product.

Packing and Shipping:

Silicon Carbide SBD is packaged and shipped in three different ways, depending on the size and quantity of the order.

  • Small orders: Packaged in a standard cardboard box, with foam inserts for protection. Shipping is by standard ground or air cargo, depending on the size of the order.
  • Medium orders: Packaged in a wooden pallet, with foam inserts for protection. Shipping is by truck or air cargo, depending on the size of the order.
  • Large orders: Packaged in a wooden crate, with foam inserts for protection. Shipping is by ocean cargo.
 

FAQ:

A1: REASUNOS Silicon Carbide SBD is a semiconductor material with a wide band gap and excellent thermal conductivity. It is suitable for high temperature and high frequency power semiconductor devices.

A2: REASUNOS Silicon Carbide SBD is manufactured in Guangdong, China.

A3: The price of REASUNOS Silicon Carbide SBD depends on the product. Please contact us for exact prices.

A4: REASUNOS Silicon Carbide SBD is packaged in dust-proof, waterproof and anti-static tubular packaging, placed inside a cardboard box in cartons.

A5: Delivery time for REASUNOS Silicon Carbide SBD is 2-30 days, depending on total quantity.