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Высокая эффективность Низкая потеря мощности Низкое напряжение MOSFET Trench / SGT процесс
| Power consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Высокоэффективный низкий потеря мощности низкое напряжение MOSFET траншея/SGT процесс
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Product name: | Low Voltage MOSFET |
| EAS capability: | High EAS Capability |
Высокоэффективный низкий потеря мощности низкое напряжение MOSFET траншея/SGT процесс
| resistance: | Low Rds(ON) |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Высокая способность EAS Низкая Rds ((ON) траншея Процесс MOSFET Синхронная ректификация
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Высокая способность EAS Низкое напряжение MOSFET для беспроводной зарядки
| EAS capability: | High EAS Capability |
|---|---|
| Product name: | Low Voltage MOSFET |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Низкое напряжение MOSFET процесса траншеи высокоэффективный драйвер двигателя для базовой станции 5G
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| resistance: | Low Rds(ON) |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Низкое напряжение MOSFET процесса траншеи высокоэффективный драйвер двигателя для базовой станции 5G
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS capability: | High EAS Capability |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Низкое напряжение MOSFET процесса траншеи высокоэффективный драйвер двигателя для базовой станции 5G
| Structure process: | Trench/SGT |
|---|---|
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Product name: | Low Voltage MOSFET |
Низкое напряжение MOSFET процесса траншеи высокоэффективный драйвер двигателя для базовой станции 5G
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Power consumption: | Low Power Loss |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Низкое напряжение MOSFET процесса траншеи высокоэффективный драйвер двигателя для базовой станции 5G
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |