Multipurpose Super Junction MOSFET N Type 600V For LED Driver

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities Package Ultra Small Package
Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc Capacitance Ultra-low Junction Capacitance
Type N EMI Margin Large EMI Margin
Device Type Power Discrete Devices Product Name Super Junction MOSFET/SJ MOSTET
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Multipurpose Super Junction MOSFET

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Super Junction MOSFET N Type

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LED Driver Superjunction Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSE60R190F N 17.6 600 165 190 TO-220F 1000
2 RSE60R190S N 17.6 600 165 190 TO-263 800
3 RSE60R150F N 22 600 130 150 TO-220F 1000
4 RSF60R150F N 22 600 130 150 TO-220F 1000
5 RSF60R190F N 17.6 600 165 190 TO-220F 1000
6 RS60R130F N 30 600 110 130 TO-220F 1000
7 RS60R130W N 30 600 110 130 TO247-3 600
8 RSF60R099F N 31 600 86 99 TO-220F 1000
9 RSF60R099W N 31 600 86 99 TO247-3 600
10 RSF60R070W N 45 600 61 70 TO247-3 600
11 RSF60R041W N 70 600 35 41 TO247-3 600
12 RSF60R070F N 48 600 58 68 TO-220F 1000
13 RSF60R026W N 100 600 20 26 TO247-3 600
14 RSU4N65D N 4 650 880 1000 TO-252 2500
15 RSU7N65D N 7 650 560 650 TO-252 2500
16 RSU7N65F N 7 650 560 650 TO-220F 1000
17 RS65R600D N 7.3 650 520 600 TO-252 2500
18 RS65R600F N 7.3 650 520 600 TO-220F 1000
19 RSE65R550D N 7.6 650 480 550 TO-252 2500
20 RSU12N65F N 12 650 380 420 TO-220F 1000
21 RS65R380D N 11 650 340 380 TO-252 2500
22 RS65R380F N 11 650 340 380 TO-220F 1000
23 RS65R280D N 15 650 240 280 TO-252 2500
24 RS65R280F N 15 650 240 280 TO-220F 1000
25 RSE65R210F N 16.8 650 185 210 TO-220F 1000
26 RS65R190F N 20 650 160 190 TO-220F 1000
27 RS65R190S N 20 650 160 190 TO-263 800
28 RS65R190T N 20 650 160 190 TO-220 1000
29 RSF65R190T N 20 650 170 190 TO-220 1000
30 RSE65R180F N 22 650 150 180 TO-220F 1000
31 RSE65R165F N 20.4 650 145 165 TO-220F 1000
32 RSF65R130F N 26 650 115 130 TO-220F 1000
33 RSE70R600F N 7.3 700 520 600 TO-220F 1000
34 RSE70R420F N 11 700 365 420 TO-220F 1000
35 RSE70R360F N 12 700 315 360 TO-220F 1000
36 RSE80R850D N 7 800 740 850 TO-252 2500
37 RS80R500F N 9 800 420 500 TO-220F 1000
38 RSE80R380F N 13 800 330 380 TO-220F 1000
39 RSE80R250F N 18 800 220 250 TO-220F 1000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Ultra-Low Junction Capacitance Superjunction Diode with Ultra Small Package and Internal Resistance

Product Description:

The Super Junction MOSFET is a type of Super Junction diode that is specifically designed to be used as a power discrete device. This Super Junction Metal Oxide Semiconductor Field Effect Transistor is a N-type device that comes in an ultra-small package, making it perfect for applications that require high power density with minimal space. It is characterized by ultra-low junction capacitance and is ideal for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, new energy power equipment, and many other applications. The Super Junction MOSFET has become an increasingly popular choice for many power electronics applications due to its superior performance.

 

Technical Parameters:

Product Attributes Description
Product Name Super Junction MOSFET/SJ MOSTET
Package Ultra Small Package
EMI Margin Large EMI Margin
Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc.
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities.
Type N
Capacitance Ultra-low Junction Capacitance
Internal Resistance Ultra Small Internal Resistance
Device Type Power Discrete Devices
 

Applications:

Super Junction MOSFET

Super Junction Metal Oxide Field Effect Transistor (Super Junction MOSFET), also known as super mosfet, is a power discrete device developed by REASUNOS from Guangdong, China. It is made by multi-layer epitaxy process to provide excellent anti EMI and anti surge capabilities. The device has ultra small internal resistance and comes in an ultra small package.

The Super Junction MOSFET from REASUNOS is dustproof, waterproof, and anti-static, and it is placed inside a cardboard box in cartons for an efficient and secure delivery. The price of the product is subject to confirmation depending on the total quantity. The delivery time is usually between 2 to 30 days, and customers can make payment using T/T in Advance(EXW). REASUNOS provides a supply ability of 5KK/month for this product.

 

Support and Services:

Super Junction MOSFET Technical Support and Services

Super Junction MOSFET is a revolutionary technology that enables efficient energy management and improved performance in a wide range of electronic applications. To ensure the best performance, Toshiba provides comprehensive technical support and services for Super Junction MOSFET products.

Technical Support

Toshiba's technical support team is committed to providing timely and comprehensive assistance with Super Junction MOSFET products. Our team of experienced engineers is available to answer any questions and provide technical advice. We also provide detailed product specifications and application notes.

Service and Repair

Toshiba offers service and repair options for Super Junction MOSFET products. Our experienced technicians can diagnose and repair any issue with your device quickly and efficiently. We also provide preventative maintenance services to ensure your device is always running at optimal performance.

 

Packing and Shipping:

Super Junction MOSFET Packaging and Shipping:

  • The products are packed in vacuum sealed packages to ensure they are not damaged during transportation.
  • The packages are then placed in a standard-sized cardboard box, with an additional layer of bubble wrap inside.
  • Shipping is done via a reliable courier service, with a tracking number provided to the customer.
 

FAQ:

Q: What is Super Junction MOSFET?
A: Super Junction MOSFET is an advanced power management device that works as a switch to control the flow of electricity in power electronics applications.
Q: Where is the place of origin of Super Junction MOSFET?
A: Super Junction MOSFET is manufactured in Guangdong, China.
Q: What is the brand name of Super Junction MOSFET?
A: The brand name of Super Junction MOSFET is REASUNOS.
Q: What is the pricing of Super Junction MOSFET?
A: The pricing of Super Junction MOSFET is based on product, please contact us for more details.
Q: What is the packaging of Super Junction MOSFET?
A: Super Junction MOSFET is packed in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the delivery time of Super Junction MOSFET?
A: The delivery time of Super Junction MOSFET is 2-30 days, depending on the total quantity.
Q: What are the payment terms of Super Junction MOSFET?
A: The payment terms of Super Junction MOSFET is 100% T/T in Advance (EXW).
Q: What is the supply ability of Super Junction MOSFET?
A: The supply ability of Super Junction MOSFET is 5KK/month.