सभी उत्पाद
उच्च दक्षता कम शक्ति हानि कम वोल्टेज MOSFET ट्रेंच / SGT प्रक्रिया
| Power consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
उच्च दक्षता कम शक्ति हानि कम वोल्टेज MOSFET ट्रेंच/SGT प्रक्रिया
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Product name: | Low Voltage MOSFET |
| EAS capability: | High EAS Capability |
उच्च दक्षता कम शक्ति हानि कम वोल्टेज MOSFET ट्रेंच/SGT प्रक्रिया
| resistance: | Low Rds(ON) |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
उच्च ईएएस क्षमता कम आरडीएस ((ओएन) ट्रेंच प्रक्रिया एमओएसएफईटी सिंक्रोनस रेक्टिफिकेशन
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
वायरलेस चार्जिंग के लिए उच्च ईएएस क्षमता निम्न वोल्टेज एमओएसएफईटी
| EAS capability: | High EAS Capability |
|---|---|
| Product name: | Low Voltage MOSFET |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
5जी बेस स्टेशन के लिए निम्न वोल्टेज एमओएसएफईटी ट्रेंच प्रक्रिया उच्च दक्षता मोटर ड्राइवर
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| resistance: | Low Rds(ON) |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
5जी बेस स्टेशन के लिए निम्न वोल्टेज एमओएसएफईटी ट्रेंच प्रक्रिया उच्च दक्षता मोटर ड्राइवर
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS capability: | High EAS Capability |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
5जी बेस स्टेशन के लिए निम्न वोल्टेज एमओएसएफईटी ट्रेंच प्रक्रिया उच्च दक्षता मोटर ड्राइवर
| Structure process: | Trench/SGT |
|---|---|
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Product name: | Low Voltage MOSFET |
5जी बेस स्टेशन के लिए निम्न वोल्टेज एमओएसएफईटी ट्रेंच प्रक्रिया उच्च दक्षता मोटर ड्राइवर
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Power consumption: | Low Power Loss |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
5जी बेस स्टेशन के लिए निम्न वोल्टेज एमओएसएफईटी ट्रेंच प्रक्रिया उच्च दक्षता मोटर ड्राइवर
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |