Practical 60KHz High Frequency IGBT , Multi Function Gate Bipolar Transistor
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |

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xSwitching Speed | Faster Switching Speed | Application Frequency | 60KHz |
---|---|---|---|
Power | High Power | Device Type | IGBT |
Application | OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc | Advantages | Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements. |
Product Name | High Power IGBT | Current Density | 400A/c㎡ |
Highlight | Practical High Frequency IGBT,60KHz High Frequency IGBT,Multi Function Gate Bipolar Transistor |
No. | Part No. | Type | Specifications and models | Package | application | |
---|---|---|---|---|---|---|
1 | RSG50N65HW | B | 650V 50A | TO-247-3 | portable energy storage、UPS、power supply | |
2 | RSG75N65HW | B | 650V 75A | TO-247-3 | portable energy storage、UPS、power supply | |
3 | RSG75N65UW | B | 650V 75A (High frequency) | TO-247-3 | High frequency power supply、Charging pile | |
4 | RSG40N120W | B | 1200V 40A | TO-247-3 | UPS、Air-conditioning compressor、PTC | |
5 | RSG40N120HW | B | 1200V 40A(Middle frequency) | TO-247-3 | UPS、motor driven | |
6 | RSG75N120UWP | B | 1200V 75A(High frequency) | TO-247-3 | High frequency power supply、Charging pile、photovoltaic、welder | |
7 | RSG120N120HWP | B | 1200V 120A(Middle frequency) | TO-247-3 | energy storage system、photovoltaic、UPS | |
8 | RSG120N120HZP | B | 1200V 120A(Middle frequency) | TO-247-4 | energy storage system、UPS |
High Power IGBT Device for Industrial Applications
Product Description:
High Power Insulated Gate Bipolar Transistor (IGBT) is a type of power semiconductor device specifically designed to deliver high power output. It is ideal for applications requiring high voltage and high current density. It features a faster switching speed, a current density of 400A/c㎡, and a range of advantages such as a narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to vehicle specification requirements. This makes IGBT the ideal choice for high power applications.
Technical Parameters:
Product Name | High Power IGBT |
Device Type | IGBT |
Application | OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc |
Application Frequency | 60KHz |
Power | High Power |
Current density | 400A/c㎡ |
Switching speed | Faster Switching Speed |
Advantages | Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements. |
Applications:
High Power IGBT, manufactured by REASUNOS from Guangdong, China, is a reliable device with a current density of 400A/c㎡. It has a fast switching speed, and is widely used in OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, and Energy Storage. It features a narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to vehicle specification requirements. The price of this product varies depending on the quantity and is supplied in dustproof, waterproof, and anti-static tubular packaging placed inside a cardboard box in cartons. Delivery time is usually 2-30 days, depending on the total quantity. Payment terms are 100% T/T in Advance (EXW). The maximum supply capacity is 5KK/month.
Support and Services:
We provide a range of technical support and service options for High Power IGBT products to ensure that our customers are able to get maximum value from their investments.
- Product selection and design assistance
- Application engineering support
- Testing and qualification services
- Product reliability and life cycle management
- On-site technical support and service
- Online technical support and service
Our team of experienced engineers is available to provide comprehensive technical support and service for High Power IGBT products.
Packing and Shipping:
High Power IGBT Packaging and Shipping:
High Power IGBT products are packaged in special antistatic packaging materials and are shipped in two layers. The first layer is a protective outer packaging, such as an antistatic bag, cardboard box, etc. The second layer is a protective inner packaging, such as an antistatic bag, foam, etc. The inner packaging should be firmly attached to the outer packaging and should protect the product from external forces during transportation. The package should be labeled clearly with the product name and model number.
FAQ:
- Q: What is the brand name of the High Power IGBT?
- A: The brand name of the High Power IGBT is REASUNOS.
- Q: Where is the High Power IGBT manufactured?
- A: The High Power IGBT is manufactured in the Guangdong Province of China.
- Q: How much does the High Power IGBT cost?
- A: The cost of the High Power IGBT will depend on the product and must be confirmed.
- Q: What kind of packaging does the High Power IGBT come with?
- A: The High Power IGBT comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
- Q: How long is the delivery time for the High Power IGBT?
- A: The delivery time for the High Power IGBT will depend on the total quantity and can range from 2-30 days.
- Q: What is the payment term for the High Power IGBT?
- A: The payment term for the High Power IGBT is 100% T/T in Advance (EXW).
- Q: What is the supply ability of the High Power IGBT?
- A: The supply ability of the High Power IGBT is 5KK/month.