High Voltage MOSFET for LED Driver Motor Series with Great Heat Dissipation

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. Voltage Rating High Voltage/Ultra-high Voltage
Heat Dissipation Great Heat Dissipation HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Product Name High Voltage MOSFET Resistance Low On-resistance
Technology MOSFET Type N
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Product Description:

High Voltage MOSFET is a powerful switching device that provides excellent characteristics in high-temperature. It has new lateral variable doping technology and special power MOS structure that allows great heat dissipation, making it suitable for high voltage/ultra-high voltage applications. It is perfect for LED driver, adaptors, industrial switching power supply, and inverters, etc. The high voltage FET technology is reliable and efficient, providing high performance for power electronic systems.

 

Technical Parameters:

Property Value
Type N
Voltage Rating High Voltage/Ultra-high Voltage
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Product name High Voltage MOSFET
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Resistance Low On-resistance
Heat Dissipation Great Heat Dissipation
Technology MOSFET
 

Applications:

High Voltage MOSFET From REASUNOS

REASUNOS High Voltage MOSFET Transistor is the ideal solution for motor series, inverter, half bridge/full bridge circuit applications, etc. Manufactured in Guangdong, CN, this transistor has a low leakage and low on-resistance, helping to achieve great heat dissipation. With a dustproof, waterproof, and anti-static tubular packaging, and placed inside a cardboard box in cartons, you can be sure that delivery time of 2-30 days will be kept. The price of this product is subject to confirmation based on the quantity you require, and you can be sure of a 5KK/month supply ability. Payment terms are 100% T/T in Advance(EXW).

 

Support and Services:

High Voltage MOSFET Technical Support and Service

At XYZ Corp, we are committed to providing the highest quality technical support and service for our High Voltage MOSFET products. Our team of highly trained and experienced engineers is available to assist with any questions or issues you may have.

We offer a comprehensive range of technical services, including:

  • On-site troubleshooting and repair
  • Software and firmware updates
  • Design and optimization consultation
  • Performance testing and analysis

If you need help or have any questions about our High Voltage MOSFET products, please don't hesitate to contact us. We are here to help!

 

Packing and Shipping:

High Voltage MOSFET packaging and shipping:

High Voltage MOSFETs are shipped in static-safe packaging. This ensures the devices are free from any electrostatic buildup, which could damage the device. The packaging is also designed to protect the devices from mechanical damage during shipping, such as vibration, shock, and temperature variations.

The packaging material used for High Voltage MOSFETs is usually foam or bubble wrap, as well as an outer box for extra protection. The devices and packaging are usually labeled with the part number, date of manufacture, and other safety information. All products are then placed in sealed, anti-static bags before being put into the shipping container.

 

FAQ:

Q1: What is High Voltage MOSFET?

A1: High Voltage MOSFET is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is designed to operate at higher voltages than regular MOSFETs. It is a type of insulated-gate field-effect transistor (IGFET) designed to withstand higher voltages.

Q2: What is the Brand Name of High Voltage MOSFET?

A2: The Brand Name of High Voltage MOSFET is REASUNOS.

Q3: Where is the place of origin of High Voltage MOSFET?

A3: The place of origin of High Voltage MOSFET is Guangdong, China.

Q4: What is the packaging of High Voltage MOSFET?

A4: The packaging of High Voltage MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: What is the delivery time and payment terms for High Voltage MOSFET?

A5: The delivery time of High Voltage MOSFET is 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance (EXW).