All Products
650V Schottky Barrier Rectifier Diode SBD Anti Surge Heatproof High Power
| Heat Resistance: | High Temperature Resistance |
|---|---|
| Application: | PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc |
| Frequency: | High Frequency |
Stable Silicon Carbide SBD Rectifier Diode Military Standard For PFC Circuit
| Frequency: | High Frequency |
|---|---|
| Material: | Silicon Carbide |
| Application: | PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc |
N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
| Product Name: | Silicon Carbide MOSFET |
|---|---|
| Efficiency: | High Efficiency |
| Resistance: | Low On Resistance |
Stable SiC High Power Semiconductor N type Great Heat Dissipation
| Efficiency: | High Efficiency |
|---|---|
| Advantages: | Stable Process And Reliable Quality |
| Heat Dissipation: | Great Heat Dissipation |
Heatproof SiC Silicon Semi Conductor Anti Surge Multiscene 1200V
| Anti Surge Current: | Srtong Ability Of Anti Surge Current |
|---|---|
| Frequency: | High Frequency |
| Power: | High Power |
Practical SiC High Power Semiconductor Multipurpose For Electronics
| Efficiency: | High Efficiency |
|---|---|
| Advantages: | Stable Process And Reliable Quality |
| Frequency: | High Frequency |
Anti EMI Superjunction Power Mosfet , Practical N Channel Power Mosfet
| Capacitance: | Ultra-low Junction Capacitance |
|---|---|
| Package: | Ultra Small Package |
| Device Type: | Power Discrete Devices |
Anti Surge MOSFET Super Junction N Channel Durable Multipurpose
| Internal Resistance: | Ultra Small Internal Resistance |
|---|---|
| EMI Margin: | Large EMI Margin |
| Product Name: | Super Junction MOSFET/SJ MOSTET |
600V Durable Super Junction MOSFET Multipurpose Small Internal Resistance
| Device Type: | Power Discrete Devices |
|---|---|
| Type: | N |
| Product Name: | Super Junction MOSFET/SJ MOSTET |
Stable Multiscene Superjunction Mosfet , Anti EMI Discrete Mosfet
| EMI Margin: | Large EMI Margin |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Type: | N |