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Keywords [ pfc circuit super junction mosfet ] match 20 products.
Anti Surge MOSFET Super Junction N Channel Durable Multipurpose
| Internal Resistance: | Ultra Small Internal Resistance |
|---|---|
| EMI Margin: | Large EMI Margin |
| Product Name: | Super Junction MOSFET/SJ MOSTET |
Durable Industrial Super Junction Mos , Multi Function Mosfet Discrete
| Product Name: | Super Junction MOSFET/SJ MOSTET |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
Industrial Stable Super Junction Transistor , Heat Dissipation Discrete Mosfet
| EMI Margin: | Large EMI Margin |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Type: | N |
Practical Super Junction Fet N Type Multi Function For Converters
| Product Name: | Super Junction MOSFET/SJ MOSTET |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Internal Resistance: | Ultra Small Internal Resistance |
Metal Oxide Super Junction Transistor Multifunctional For Industry
| Internal Resistance: | Ultra Small Internal Resistance |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Product Name: | Super Junction MOSFET/SJ MOSTET |
Anti Surge Super Junction Mos , Practical N Channel Metal Oxide Semiconductor
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
|---|---|
| Type: | N |
| Capacitance: | Ultra-low Junction Capacitance |
Stable Super Junction Fet Multi Layer For New Energy Power Equipment
| Type: | N |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Internal Resistance: | Ultra Small Internal Resistance |
Stable Multiscene Superjunction Mosfet , Anti EMI Discrete Mosfet
| EMI Margin: | Large EMI Margin |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Type: | N |
Anti EMI Superjunction Power Mosfet , Practical N Channel Power Mosfet
| Capacitance: | Ultra-low Junction Capacitance |
|---|---|
| Package: | Ultra Small Package |
| Device Type: | Power Discrete Devices |
Durable Superjunction Power Mosfet , Anti Surge N Channel Mosfet
| Capacitance: | Ultra-low Junction Capacitance |
|---|---|
| Package: | Ultra Small Package |
| Device Type: | Power Discrete Devices |