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Keywords [ n type high voltage semiconductor ] match 111 Products.
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Power Supply Diode Schottky Barrier Stable , MBR2045CT SiC Schottky Rectifier
| Application: | Display Screen Power Supply, Laptop Power Supply, Switching Power Supply, Etc |
|---|---|
| Product Name: | Schottky Barrier Diodes |
| Forward Voltage: | Low VF |
Industrial Schottky Barrier Diodes MBR10100CT For Switching Power Supply
| Characteristics: | Low Forward Low Voltage Drop, Low Loss, Extremely Short Reverse Recovery Time |
|---|---|
| Product Name: | Schottky Barrier Diodes |
| Cost: | Low Cost |
Practical Low Power Mosfet Transistors 20V 60V For Wireless Charging
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
|---|---|
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| EAS Capability: | High EAS Capability |
100V 150V Schottky Barrier Diodes Multifunctional MBR10200CT
| Product Name: | Schottky Barrier Diodes |
|---|---|
| Forward Voltage: | Low VF |
| Leakage: | Low Leakage |
Multi Function Power Schottky Rectifier Practical MBRF20100CT
| Cost: | Low Cost |
|---|---|
| Leakage: | Low Leakage |
| Characteristics: | Low Forward Low Voltage Drop, Low Loss, Extremely Short Reverse Recovery Time |
Multipurpose SBD Mosfet , Durable Surface Mount Schottky Barrier Rectifier
| Characteristics: | Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability |
|---|---|
| Frequency: | High Frequency |
| Material: | Silicon Carbide |
Industrial Super Junction MOSFET N Channel Multi Layer Process
| Internal Resistance: | Ultra Small Internal Resistance |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
1200V Silicon Carbide SBD Schottky Barrier Diode Anti Surge Stable
| Device Type: | Power Discrete Devices |
|---|---|
| Efficiency: | High Efficiency |
| Frequency: | High Frequency |
Automotive Silicon Carbide SBD Practical For Power Electronics
| Characteristics: | Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability |
|---|---|
| Product Name: | Silicon Carbide SBD/SiC SBD |
| Application: | PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc |
Practical Silicon Carbide SBD Barrier Schottky Diode Heatproof 650V
| Material: | Silicon Carbide |
|---|---|
| Device Type: | Power Discrete Devices |
| Heat Resistance: | High Temperature Resistance |